A single-pole four-throw (SP4T) RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator (SOI) CMOS process. An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity. A multistack field-effect-transistor (FET) structure with body floating technique is employed to provide good power-handling capability. The proposed design demonstrates a measured input 0.1-dB compression point of 38.5 dBm at 1.9 GHz, an insertion loss of 0.27 dB/0.33 dB and an isolation of 35 dB/27 dB at 900 MHz/1.9 GHz, respectively. The overall chip area is only 0.49 mm2. This RF switch can be used in GSM/WCDMA/LTE front-end modules.

中文翻译：

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0.5–3.0 GHz SP4T 射频开关，在 130-nm SOI CMOS 中采用改进的体自偏置技术

具有基于电荷泵的控制器的单刀四掷 (SP4T) 射频开关是在商用 130 纳米绝缘体上硅 (SOI) CMOS 工艺中设计和实现的。利用基于二极管的改进体自偏置技术来简化控制电路并提高线性度。采用具有体浮动技术的多堆栈场效应晶体管 (FET) 结构可提供良好的功率处理能力。所提议的设计在 1.9 GHz 处测得的输入 0.1-dB 压缩点为 38.5 dBm，插入损耗为 0.27 dB/0.33 dB，在 900 MHz/1.9 GHz 处的隔离度为 35 dB/27 dB。整体芯片面积仅为 0.49 mm2。此射频开关可用于 GSM/WCDMA/LTE 前端模块。