This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film. The nanorod ZnO thin film was fabricated by hydrothermal technique on boron doped p-type Si (100) substrate. The Ag//ZnO/Al planar diode operating with voltage bias from –3 to 3 V. The I–V characteristics clearly indicate that the devices have rectifying performance. The thermionic emission theory governs the current across the studied Schottky diode. The device achieved a turn-on voltage of 0.9 V, barrier height 0.69 eV and saturation current of 1.2 × 10–6 A. The diode shows a very large ideality factor (n > > 2) which is attributed to high interface trap concentration. The surface topology was investigated by scanning electron microscope (SEM). The structural properties of the nanostructured ZnO thin film were characterized by X-ray diffraction (XRD). The SEM images reveal that the ZnO nanorods grow perpendicular to the substrate with uniformity and high density. The XRD pattern illustrates the dominant peak appearing at (002). This intense peak indicates the c-axis orientated phase of the wurtzite ZnO structure. It demonstrates that the crystals grow uniformly perpendicular to the substrate surface in good agreement with the SEM images.

中文翻译：

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基于肖特基二极管的水热法生长纳米花氧化锌薄膜

本文报道了基于纳米棒 ZnO 薄膜的平面肖特基二极管的实现。通过水热技术在掺硼 p 型 Si (100) 衬底上制备纳米棒 ZnO 薄膜。Ag//ZnO/Al 平面二极管在 –3 至 3 V 的偏压下工作。 I-V 特性清楚地表明该器件具有整流性能。热电子发射理论控制着所研究的肖特基二极管上的电流。该器件实现了 0.9 V 的开启电压、0.69 eV 的势垒高度和 1.2 × 10–6 A 的饱和电流。二极管显示出非常大的理想因子 (n > > 2)，这归因于高界面陷阱浓度。通过扫描电子显微镜（SEM）研究表面拓扑结构。通过X射线衍射（XRD）表征纳米结构ZnO薄膜的结构特性。SEM 图像显示 ZnO 纳米棒垂直于基板以均匀和高密度生长。XRD 图说明了出现在 (002) 处的主峰。这个强烈的峰表明纤锌矿 ZnO 结构的 c 轴取向相。它表明晶体垂直于基板表面均匀生长，与 SEM 图像非常吻合。