Two-dimensional (2D) semiconductors are attractive for electronic devices with atomically thin channels. However, controlling the electronic properties of the 2D materials by incorporating impurity dopants is inherently difficult due to the limited physical space in the atomically thin lattices. Here we show that a solid-state ionic doping approach can be used to tailor the carrier type in 2D semiconductors and create programmable devices. Our strategy exploits a superionic phase transition in silver iodide to induce switchable ionic doping. We create few-layer tungsten diselenide (WSe₂) devices that can be reversibly transformed into transistors with reconfigurable carrier types and into diodes with switchable polarities by controllably poling the van der Waals integrated silver iodide above the superionic phase transition temperature. We also construct complementary logic gates by integrating and programming identical transistors, and show that the programmed functions can be erased by an external trigger (temperature or ultraviolet irradiation) to create the temporary and delible electronics that are desirable for electronic security.

二维（2D）半导体对于具有原子薄通道的电子设备很有吸引力。然而，由于原子薄晶格中有限的物理空间，通过掺入杂质掺杂剂来控制2D材料的电子性质固有地困难。在这里，我们证明了固态离子掺杂方法可用于定制2D半导体中的载流子类型并创建可编程器件。我们的策略是利用碘化银中的超离子相变来诱导可切换的离子掺杂。我们创建了几层二硒化钨（WSe ₂通过在超离子相变温度以上可控地极化范德华集成碘化银，可将其可逆地转换为具有可重配置载流子类型的晶体管和具有可转换极性的二极管。我们还通过对相同的晶体管进行集成和编程来构造互补逻辑门，并表明可以通过外部触发器（温度或紫外线照射）擦除已编程的功能，以创建电子安全性所需要的临时可食用电子设备。