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Microstructure of combined electroless and galvanic deposits on roll annealed copper foils and copper single crystals
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.tsf.2020.138366
Maryam Abbasi , Delilah A. Brown , Tobias Bernhard , Kilian Klaeden , Jörg F. Schulze , Sebastian Zarwell , Ralf Brüning

Abstract The production of highly flexible printed circuit boards requires copper plating on roll annealed (RA) Cu foils with strong (001) crystallographic orientation, with electroless copper plating followed by galvanic copper plating. Concurrent epitaxial and polycrystalline crystal growth during galvanic plating has to be avoided because it leads to unacceptably rough sample surfaces, with polycrystalline regions protruding. Two electroless plating processes are compared in terms of their interaction with the subsequent galvanic plating step. Plating tests are carried out with RA substrates and (111), (011) and (001) copper single crystals. Crystallite orientation distributions are determined by measuring X-ray diffraction pole figures for the substrates, as well as the substrates with galvanic deposits, electroless deposits and combined electroless and galvanic deposits. One of the electroless processes creates Cu {111} planes parallel to the sample surface, thereby reliably disrupting epitaxy between the substrate surface and the growing galvanic film. Moderate constant stress in the electroless processes enables good mechanical adhesion to the substrate.

中文翻译:

轧制退火铜箔和铜单晶上化学镀和电偶沉积的显微组织

摘要 高柔性印刷电路板的生产需要在具有强 (001) 晶体取向的辊轧退火 (RA) 铜箔上镀铜,然后进行化学镀铜,然后是电镀铜。必须避免电镀过程中同时发生的外延和多晶晶体生长,因为这会导致样品表面粗糙得令人无法接受,多晶区域会突出。比较两种化学镀工艺与后续电镀步骤的相互作用。电镀测试是用 RA 衬底和 (111)、(011) 和 (001) 铜单晶进行的。通过测量基材的 X 射线衍射极图以及具有电镀沉积物的基材,确定微晶取向分布,化学沉积和化学沉积和电镀沉积相结合。化学镀工艺之一产生平行于样品表面的 Cu {111} 平面,从而可靠地破坏衬底表面和正在生长的电流膜之间的外延。化学镀工艺中的适度恒定应力可实现对基材的良好机械粘附。
更新日期:2020-11-01
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