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Effects of tunneling oxide defect density and inter-diffused carrier concentration on carrier selective contact solar cell performance: Illumination and temperature effects
Solar Energy ( IF 6.0 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.solener.2020.09.060
Cheolmin Park , Nagarajan Balaji , Shihyun Ahn , Jinjoo Park , Eun-chel Cho , Junsin Yi

Abstract In this study, technology computer-aided design (TCAD) was used to investigate carrier selective contact solar cell performance based on the boundary of tunneling oxide and electron selective contact layer properties. The role of tunneling oxide quality in the passivation and inter-diffusion properties of the plasma-enhanced chemical vapor deposition of phosphorus-doped amorphous silicon as an electron selective contact layer is studied for carrier selective contact solar cells. Tunnel oxide quality varies according to the ratio of Si4+ to Si2+ state. For the Si4+/Si2+ ratio of 4, open-circuit voltage of 730 mV and the lowest interface trap density of 5.3 × 1010 cm−2 eV−1 are achieved. The change in diffusion depth of the doped layer with respect to the annealing temperature is analysed by transmission electron microscopy (TEM)/energy dispersive X-ray spectroscopy (EDS) measurement. Carrier selective contact solar cell parameters are optimized by incorporating the experimental values of interface trap density, inter-diffused impurity concentration, and depth in the Quokka 3 TCAD tool. Solar cell conversion efficiency of 24.31% was obtained. To understand the response of carrier selective solar cell to the environmental changes, the output characteristics of the solar cell were studied by varying the illumination temperature by 10% of the standard test conditions (STC) and temperature from 277 K to 377 K (difference of 100 K).

中文翻译:

隧道氧化物缺陷密度和内部扩散载流子浓度对载流子选择性接触太阳能电池性能的影响:光照和温度影响

摘要 在本研究中,基于隧道氧化物边界和电子选择性接触层特性,采用技术计算机辅助设计(TCAD)来研究载流子选择性接触太阳能电池的性能。研究了隧道氧化物质量在作为电子选择接触层的磷掺杂非晶硅的等离子体增强化学气相沉积的钝化和互扩散特性中的作用,用于载流子选择接触太阳能电池。隧道氧化物质量根据 Si4+ 与 Si2+ 状态的比率而变化。对于 Si4+/Si2+ 比为 4,实现了 730 mV 的开路电压和 5.3 × 1010 cm-2 eV-1 的最低界面陷阱密度。通过透射电子显微镜 (TEM)/能量色散 X 射线光谱 (EDS) 测量分析掺杂层的扩散深度相对于退火温度的变化。通过在 Quokka 3 TCAD 工具中结合界面陷阱密度、相互扩散的杂质浓度和深度的实验值,优化了载流子选择性接触太阳能电池参数。获得了24.31%的太阳能电池转换效率。为了了解载流子选择性太阳能电池对环境变化的响应,通过将照明温度改变为标准测试条件 (STC) 的 10% 和温度从 277 K 到 377 K(差异)来研究太阳能电池的输出特性。 100 K)。通过在 Quokka 3 TCAD 工具中结合界面陷阱密度、相互扩散的杂质浓度和深度的实验值,优化了载流子选择性接触太阳能电池参数。获得了24.31%的太阳能电池转换效率。为了了解载流子选择性太阳能电池对环境变化的响应,通过将照明温度改变为标准测试条件 (STC) 的 10% 和温度从 277 K 到 377 K(差异)来研究太阳能电池的输出特性。 100 K)。通过在 Quokka 3 TCAD 工具中结合界面陷阱密度、相互扩散的杂质浓度和深度的实验值,优化了载流子选择性接触太阳能电池参数。获得了24.31%的太阳能电池转换效率。为了了解载流子选择性太阳能电池对环境变化的响应,通过将照明温度改变为标准测试条件 (STC) 的 10% 和温度从 277 K 到 377 K(差异)来研究太阳能电池的输出特性。 100 K)。
更新日期:2020-11-01
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