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Performance enhancement of organic/Si solar cell using CNT embedded hole selective layer
Solar Energy ( IF 6.0 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.solener.2020.09.024
Kurias K. Markose , M. Jasna , P.P. Subha , Aldrin Antony , M.K. Jayaraj

Abstract In this work, we present a simple and solution-based synthesis approach to combine the virtues of PEDOT:PSS and carbon nanotube (CNT) by developing a composite film and their application as a hole selective layer (HSL) in organic-silicon hybrid heterojunction solar cell. The heterojunction solar cell with the optimised PEDOT: PSS-CNT HSL showed a notable open-circuit voltage ( V oc ) of 588.6 mV, short circuit current density ( J sc ) of 25.3 mA/cm2 and fill factor (FF) of 60.79% yielding a photo-conversion efficiency (η) of 9.05%. The pristine PEDOT:PSS/Si device obtained an η of 6.2% with a V oc of 502 mV. The role of CNT in the charge transport mechanism and improving V oc was corroborated by employing various characterisation methods such as J-V, C-V, and electrochemical impedance spectroscopy. The composite layer induced a strong inversion layer in silicon and enhanced the device performance. The application of PEDOT:PSS-CNT composite film is not limited to c-Si solar cells, but can also be used to fabricate flexible organic and perovskite solar cells.

中文翻译:

使用碳纳米管嵌入空穴选择层增强有机/硅太阳能电池的性能

摘要 在这项工作中,我们提出了一种简单且基于溶液的合成方法,通过开发复合薄膜及其在有机硅杂化中作为空穴选择层 (HSL) 的应用,将 PEDOT:PSS 和碳纳米管 (CNT) 的优点结合起来。异质结太阳能电池。具有优化 PEDOT: PSS-CNT HSL 的异质结太阳能电池显示显着的开路电压 (Voc) 为 588.6 mV,短路电流密度 (J sc ) 为 25.3 mA/cm2,填充因子 (FF) 为 60.79%产生 9.05% 的光转换效率 (η)。原始 PEDOT:PSS/Si 器件的 η 为 6.2%,V oc 为 502 mV。CNT 在电荷传输机制和提高 V oc 中的作用通过使用各种表征方法(如 JV、CV 和电化学阻抗谱)得到证实。复合层在硅中诱导了强反型层并增强了器件性能。PEDOT:PSS-CNT复合薄膜的应用不仅限于c-Si太阳能电池,还可用于制造柔性有机和钙钛矿太阳能电池。
更新日期:2020-11-01
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