We present the results of the development of the technology for the growth of HPGe ingots with a diameter of 110–120 mm and the characteristics of the first detector made of a crystal of this diameter. A semi-planar detector with a crystal size of 110x35 mm provided an energy resolution of 570 eV (on 60 keV), 702 eV (on 122 keV), 1337 eV (on 662 keV) and 1830 eV (on 1332 keV) with noise level on pulser peak of 556 eV. The relative detection efficiency of gamma radiation of the detector on the energy of 1332 keV was 65%.

中文翻译：

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大直径HPGe半平面探测器的光谱性能

我们介绍了直径为110-120 mm的HPGe锭生长技术的开发结果，以及第一个由该直径的晶体制成的探测器的特性。晶体尺寸为110x35 mm的半平面探测器提供了570 eV（60 keV时），702 eV（122 keV时），1337 eV（662 keV时）和1830 eV（1332 keV）的能量分辨率556 eV脉冲峰值上的电平。探测器的伽玛辐射在1332 keV能量上的相对探测效率为65％。