Ultra-low-power microcontrollers play an important role in system applications. In this paper, a Nano-watt Power-On Reset (POR) circuit with Brown-Out Detection (BOD) capability was proposed. The proposed circuit implemented in a 0.18 ​μm CMOS process, which contains long-reset and fast-reset time mode and provides a reset signal with approximately 3.314s and 22 ​ms, respectively. The embedded brown-out detection circuit can detect the event in time, as long as the abnormal supply voltage decreases to 1.4 ​V and the brown-out duration is longer than the microsecond range under 1.8 ​V–3.3 ​V. To further reduce power consumption, a bias state switching circuit and a Vpulse control signal generating circuit are proposed to reduce the static current in the start-up circuit and Schmitt triggers circuit. The circuit consumes less than 100 ​nA under 1.8 ​V–3.3 ​V power supply and occupies 110 ​× ​100 ​μm² area.

超低功耗微控制器在系统应用中起着重要作用。本文提出了一种具有欠压检测（BOD）功能的纳瓦级上电复位（POR）电路。拟议的电路以0.18μmCMOS工艺实现，它包含长复位和快速复位时间模式，并分别提供大约3.314s和22 ms的复位信号。嵌入式掉电检测电路可以及时检测到事件，只要异常电源电压降低到1.4V并且掉电持续时间长于1.8V至3.3V下的微秒范围即可。为了进一步降低功耗，提出了一种偏置状态切换电路和一个Vpulse控制信号生成电路，以减少启动电路和施密特触发器电路中的静态电流。该电路在1以下时的功耗小于100 nA。²区。