ABSTRACT

A series of 50 nm-thick molybdenum disulfide (MoS₂) thin films with a nearly vertically aligned plate-like morphology were prepared by radio frequency (RF) magnetron sputtering method under Ar pressure of 4 Pa, 2 Pa, 0.8 Pa and 0.5 Pa. The vertical aligning is an ideal edge-terminated structure to expose most active sites, which results in a superior electrocatalytic hydrogen evolution reaction (HER) performance. The results of electrochemical measurements show that the MoS₂ films prepared under 0.8 Pa exhibit best HER performance with a low onset overpotential of 149 mV. The vertically aligned MoS₂ films prepared by RF-magnetron sputtering method are expected to be ideal alternative electrocatalysts for platinum (Pt).

摘要

在 4 Pa、2 Pa、0.8 Pa 和 0.5 Pa 的 Ar 压力下，通过射频 (RF) 磁控溅射法制备了一系列 50 nm 厚的二硫化钼 (MoS ₂ ) 薄膜，具有几乎垂直排列的板状形态. 垂直排列是一种理想的边缘终止结构，可以暴露大多数活性位点，从而产生优异的电催化析氢反应 (HER) 性能。电化学测量结果表明，在0.8 Pa下制备的MoS ₂薄膜表现出最佳的HER性能，起始过电位低至149 mV。通过射频磁控溅射法制备的垂直排列的 MoS ₂薄膜有望成为铂 (Pt) 的理想替代电催化剂。