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Influential Ag Concentration in Optical–Electrical Properties of Cd1–2xAg2xSe Photoanodes for Quantum‐Dot‐Sensitized Solar Cell Applications
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-09-25 , DOI: 10.1002/pssa.202000383
Ha Thanh Tung 1 , Dang Huu Phuc 2, 3
Affiliation  

Cd1−2xAg2xSe films (as 0% ≤ x ≤ 5%, at%) are synthesized by chemistry method for fabricating anodes in optoelectronic devices. Further, the structural, optical, and electrical properties of the ternary film are extensively investigated. The structural properties of the Cd1−2xAg2xSe anodes are characterized using X‐ray diffraction (XRD) which confirms the cubic structure in the anodes. The optical properties of the thin films are recorded by UV–vis with an effect of metal dopants. Those results are incorporated with Tauc correlation to determine the optical parameters, valence band and conduction band positions, steepness parameter, and electron–phonon interaction in the samples. In addition, the electrical characteristics of thin films are analyzed using their photocurrent density curves, and the characteristic resistances in the optoelectronic devices are determined using the electrochemical impedance spectrum.

中文翻译:

Ag浓度对量子点敏化太阳能电池应用中Cd1-2xAg2xSe光阳极光电性能的影响

1-2 X的Ag 2 X硒膜(如0%≤  X  ≤5%,%)通过化学方法合成的用于光电器件的制造阳极。此外,对三元膜的结构,光学和电学性质进行了广泛的研究。Cd 1-2 x Ag 2 x的结构性质硒阳极使用X射线衍射(XRD)进行表征,这证实了阳极中的立方结构。薄膜的光学性质是通过紫外可见光记录的,并带有金属掺杂剂。将这些结果与Tauc相关性结合在一起,以确定样品中的光学参数,价带和导带位置,陡度参数以及电子-声子相互作用。另外,使用薄膜的光电流密度曲线分析薄膜的电特性,并使用电化学阻抗谱确定光电器件中的特征电阻。
更新日期:2020-11-21
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