We investigated the electrical conductivity of Ti‐H‐doped synthetic olivine aggregates at 4 GPa, 873–1273 K, and controlled oxygen fugacities. Under a given pressure and temperature, electrical conductivity depends on both hydrogen and Ti content, but these samples show different conductivity behavior from that observed in Ti‐poor sample such as San Carlos olivine. We found that when Ti content is comparable to or larger than hydrogen content, Ti has notable effects on electrical conductivity, but the effects of Ti is different between the H‐rich and the H‐poor regimes. In the H‐rich regime, electrical conductivity of olivine is weakly dependent on Ti content but has different sensitivity to water content than a Ti‐poor olivine. In contrast, in the H‐poor regime, electrical conductivity of Ti‐rich olivine is substantially higher than the conductivity of Ti‐poor olivine. As a consequence, the effect of hydrogen for the Ti‐rich synthetic olivine on electrical conductivity is smaller than for the Ti‐poor (natural) olivine for the modest H content expected in the asthenosphere, whereas in the H‐poor lithosphere Ti will enhance the electrical conductivity substantially. Possible models to explain these observations are proposed including the interaction of Ti‐related defects and H‐related defects as well as the charge transfer caused by the hopping conduction due to Ti³⁺ ⇔ Ti⁴⁺ under the H‐poor conditions. We conclude that the addition of Ti to olivine affects the behavior of H‐related defects, and therefore the applications of results from Ti‐rich olivine samples to the Ti‐poor real Earth need to be made with great care.

中文翻译：

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含钛含水橄榄石聚集体在高温高压下的电导率

我们研究了Ti-H掺杂的合成橄榄石聚集体在4 GPa，873–1273 K的电导率和受控的氧逸度。在给定的压力和温度下，电导率取决于氢和钛的含量，但是这些样品的电导行为与在贫钛样品（如圣卡洛斯橄榄石）中观察到的不同。我们发现，当Ti含量等于或大于氢含量时，Ti对电导率有显着影响，但Ti的影响在富H和贫H态之间是不同的。在富氢状态下，橄榄石的电导率对钛含量的依赖性很小，但对水含量的敏感性与贫钛的橄榄石不同。相比之下，在贫困H政权下，富钛橄榄石的电导率明显高于贫钛橄榄石的电导率。结果，对于软流圈中预期的适度H含量，氢对富Ti合成橄榄石的导电性的影响小于对Ti贫（天然）橄榄石的影响，而在H贫乏岩石圈中，Ti会增强导电性。提出了解释这些现象的可能模型，包括与Ti有关的缺陷和与H有关的缺陷之间的相互作用，以及由于电子跃迁引起的电荷转移。而在贫氢岩石圈中，Ti将大大提高电导率。提出了解释这些现象的可能模型，包括与Ti有关的缺陷和与H有关的缺陷之间的相互作用，以及由于电子跃迁引起的电荷转移。而在贫氢岩石圈中，Ti将大大提高电导率。提出了解释这些现象的可能模型，包括与Ti有关的缺陷和与H有关的缺陷之间的相互作用，以及由于电子跃迁引起的电荷转移。在H贫乏条件下Ti ³⁺  ⇔Ti ⁴⁺。我们得出的结论是，在橄榄石中添加Ti会影响与H有关的缺陷的行为，因此，必须谨慎地将富钛橄榄石样品的结果应用于贫钛真实地球。