Abstract Flexible and low-voltage near-infrared organic phototransistors (NIR OPTs) based on newly developed phosphonic acid (PA) self-assembled monolayers (SAMs) and donor-acceptor polymers diketopyrrolopyrrole-dithienylthieno [3,2-b] thiophene (DPP-DTT) were prepared. Results show that devices exhibit field-effect mobilities up to 0.189 cm2V−1s−1, threshold voltage of −2.25 V and Ion/off ratio of 7.79 × 105. The devices are highly sensitive to the 650 nm and near-infrared 808 nm light illumination. The maximum photo-/dark-current ratio (P) and the responsivity (R) reaches 4.3 × 103, 11.59 A/W and 2.25 × 104, 0.10 A/W for the 650 nm and 808 nm light illumination, respectively. The azide end groups in the phosphonic acid provide the possibility of diversification for insulating layers of the OFETs.

中文翻译：

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基于新型自组装膦酸单层的柔性低压光电晶体管

摘要 基于新开发的膦酸 (PA) 自组装单分子层 (SAM) 和供体-受体聚合物二酮吡咯并吡咯-二噻吩基噻吩 [3,2-b] 噻吩 (DPP- DTT)。结果表明，器件表现出高达 0.189 cm2V−1s−1 的场效应迁移率、−2.25 V 阈值电压和 7.79 × 105 的离子/截止比。该器件对 650 nm 和近红外 808 nm 光高度敏感照明。对于 650 nm 和 808 nm 光照射，最大光/暗电流比 (P) 和响应度 (R) 分别达到 4.3 × 103、11.59 A/W 和 2.25 × 104、0.10 A/W。膦酸中的叠氮化物端基为 OFET 的绝缘层提供了多样化的可能性。