Electron bombarded Active Pixel Sensor (EBAPS) is well known for its low noise in low-light level imaging, high mechanical integration, and a relatively low cost. It plays an important role in areas of the industrial process as well as the fundamental scientific research. However, the performance of EBAPS is intensively influenced by the structural parameters (i.e. the acceleration voltage between cathode and anode, thickness of the passivation layer, etc.). Due to the influence of these factors mentioned above, the performance of EBAPS is restricted to achieve its best condition. Herein, a model based on the optimized Monte Carlo method was proposed for effectively analyzing the scattering behavior of electrons within the electron multiplier layer. Unlike traditional simulation, which only deals with the electron scattering in longitudinal, in this paper, we simulate the electron scattering character not only in horizontal but also vertical among the multiplier layer, which would react to the influence induced by structural parameters more complete and more precise. Based on the proposed model, an experimental prototype of EBAPS is built and its detection sensitivity achieves [Formula: see text] lux under spectral response of ultraviolet (UV) spectroscopy, which improved a lot from our former design. The proposed model can be used for analyzing the influence induced by structural parameters, which exhibit enormous potential for exploring the high-gain EBAPS.

中文翻译：

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EBAPS中多层电子散射的优化蒙特卡罗方法分析

电子轰击有源像素传感器 (EBAPS) 以其在低照度成像中的低噪声、高机械集成度和相对较低的成本而闻名。它在工业过程和基础科学研究领域发挥着重要作用。然而，EBAPS 的性能受到结构参数（即阴极和阳极之间的加速电压、钝化层厚度等）的强烈影响。由于上述这些因素的影响，EBAPS 的性能受限于达到最佳状态。本文提出了一种基于优化蒙特卡罗方法的模型，用于有效分析电子倍增层内电子的散射行为。与仅处理纵向电子散射的传统模拟不同，在本文中，我们不仅模拟了倍增层之间的水平方向而且还模拟了垂直方向的电子散射特性，这将更完整和更精确地对结构参数引起的影响作出反应。基于所提出的模型，建立了EBAPS的实验样机，其检测灵敏度在紫外（UV）光谱的光谱响应下达到了[公式：见正文]勒克斯，这比我们之前的设计有很大改进。所提出的模型可用于分析结构参数引起的影响，这对于探索高增益 EBAPS 具有巨大的潜力。基于所提出的模型，建立了EBAPS的实验样机，其检测灵敏度在紫外（UV）光谱的光谱响应下达到了[公式：见正文]勒克斯，这比我们之前的设计有很大改进。所提出的模型可用于分析结构参数引起的影响，这对于探索高增益 EBAPS 具有巨大的潜力。基于所提出的模型，建立了EBAPS的实验样机，其检测灵敏度在紫外（UV）光谱的光谱响应下达到了[公式：见正文]勒克斯，这比我们之前的设计有很大改进。所提出的模型可用于分析结构参数引起的影响，这对于探索高增益 EBAPS 具有巨大的潜力。