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Doping dependence of thermopower in cuprate superconductors
Modern Physics Letters B ( IF 1.8 ) Pub Date : 2020-09-25 , DOI: 10.1142/s0217984921500342
Ling Qin 1 , Yiqun Liu 2 , Shiping Feng 2
Affiliation  

The doping dependence of the thermopower of cuprate superconductors in the normal-state is studied within the [Formula: see text]–[Formula: see text] model. It is shown that with a proper modification of the bare electron dispersion in the [Formula: see text]–[Formula: see text] model, the experimental results of the doping dependence of the normal-state thermopower are qualitatively reproduced. In particular, the theory shows that a pseudogap-generated split of the van Hove peak in the density of states appears in the underdoped and optimally doped regimes, however, this split is absent from the overdoped regime. Concomitantly, the strong asymmetry of the spectral conductivity near the electron Fermi surface emerges, where the peak in the spectral conductivity appears always below the electron Fermi surface in the underdoped and optimally doped regimes, while it appears above the electron Fermi surface in the overdoped regime. This strong asymmetry of the spectral conductivity leads to the unusual behaviors of the normal-state thermopower from the underdoped regime to the overdoped regime.

中文翻译:

铜酸盐超导体中热电势的掺杂依赖性

在[公式:见正文]-[公式:见正文]模型中研究了铜酸盐超导体在常态下的热电势的掺杂依赖性。结果表明,通过对[公式:见正文]-[公式:见正文]模型中的裸电子色散进行适当修改,定性再现了常态热电势的掺杂依赖性的实验结果。特别是,该理论表明,态密度中van Hove峰的赝能隙产生的分裂出现在欠掺杂和最佳掺杂区域中,然而,这种分裂在过掺杂区域中不存在。同时,电子费米表面附近的光谱电导率的强不对称性出现了,其中光谱电导率的峰值总是出现在欠掺杂和最佳掺杂状态下的电子费米表面下方,而在过掺杂状态下它出现在电子费米表面上方。光谱电导率的这种强不对称性导致从欠掺杂状态到过掺杂状态的正常状态热电势的异常行为。
更新日期:2020-09-25
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