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Topological insulators based on HgTe
Physics-Uspekhi ( IF 3.1 ) Pub Date : 2020-09-24 , DOI: 10.3367/ufne.2019.10.038669
Z D Kvon 1, 2 , D A Kozlov 1, 2 , E B Olshanetsky 1 , G M Gusev 3 , N N Mikhailov 1 , S A Dvoretsky 1
Affiliation  

The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility (up to ##IMG## [http://ej.iop.org/images/1063-7869/63/7/629/tex_pu_8812_img1.gif] {$ 5\times10^{5} \rm ~cm^2~V^{-1}~s^{-1}$} ) of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov–de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.

中文翻译:

基于HgTe的拓扑绝缘子

综述了基于HgTe量子阱和薄膜的2D和3D拓扑绝缘体(TI)研究中获得的最有趣的实验结果。在2D TI的情况下,这包括观察非局部弹道和扩散传输,2D TI的磁击穿以及边缘通道电阻的温度异常。在3D TI中,创纪录的高移动性(高达## IMG ## [http://ej.iop.org/images/1063-7869/63/7/629/tex_pu_8812_img1.gif] {$ 5 \ times10已经获得了表面二维狄拉克费米子(DFs)的^ {5} \ rm〜cm ^ 2〜V ^ {-1}〜s ^ {-1} $}。这样就可以确定所有主要的TI参数(两个表面上的DF的体隙和密度),并提供DF的Shubnikov-de Haas振荡相位的信息,这表明了费米子自旋与动量之间的刚性拓扑耦合。结论中讨论了进一步研究的前景。
更新日期:2020-09-25
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