β -Ga 2 O 3 is a next-generation ultra wide bandgap semiconductor ( E g = 4.8–4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial β -Ga 2 O 3 layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ∼ 1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods ...

中文翻译：

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同质外延β-Ga 2 O 3层的生长和表征

β-Ga 2 O 3是下一代超宽带隙半导体（E g = 4.8–4.9 eV），可以在商业基板上同质外延生长，从而使下一代电力电子设备成为重要应用。分析用于这种装置的同质外延层的质量具有挑战性，部分原因是传统X射线衍射（XRD）的探测深度大，而且原子力显微镜（AFM）具有表面敏感性。在此，研究e逝掠入射偏斜不对称XRD和AFM的组合方法，以有效表征分子束外延在各种Ga / O通量比下生长的同质外延β-Ga 2 O 3层的质量。考虑到结构和形态，Ga / O比约为1.15时可获得最佳薄膜，