On behalf of myself and my fellow Guest Editors for the Special Issue on Ultra Wide Band Gap Semiconductors for Power Control and Conversion appearing in this month’s issue of the IEEE Transactions on Electron Devices, we are gratified to be able to present readers with a selection of papers spanning the current state of the art in wide and ultrawidebandgap semiconductor devices. Electronics for power control and conversion is presently going through a renaissance, with new device concepts, extensions of known concepts to new materials, and new applications all merging simultaneously. Fundamental material-level work in Ga2O3, diamond, Al(Ga)N, and other ultrawidebandgap materials have begun to produce device results commensurate with the fundamental advantages that these materials promise for power control and conversion applications. At the same time, the understanding and performance of devices based on SiC and GaN continue to improve. Applications of these new materials and devices include automotive, data center power management, grid control, industrial and locomotive traction control, and others. Despite the tremendous progress in this area, however, much remains to be understood. The role of intrinsic and extrinsic defects in these materials on device performance, optimal strategies for device design and fabrication, surface passivation, and dielectric materials suitable for the high electric fields supported by these materials, device structures, and concepts for achieving the best possible electrical performance, appropriate approaches to thermal management, and the potential and challenges of integration of these devices with other semiconductors for system implementation are all areas in which rapid progress is being made.

中文翻译：

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特刊：用于功率控制和转换的超宽带隙半导体

代表我本人和我的同行客座编辑，我们很高兴能够向读者展示本月刊的 IEEE 电子器件交易会刊中用于功率控制和转换的超宽带隙半导体特刊。论文涵盖了宽和超宽带隙半导体器件的当前技术水平。用于功率控制和转换的电子产品目前正在经历复兴，新设备概念、已知概念向新材料的扩展以及新应用都同时合并。Ga2O3、金刚石、Al(Ga)N 和其他超宽带隙材料的基础材料级工作已经开始产生与这些材料有望用于功率控制和转换应用的基本优势相称的器件结果。同时，对基于 SiC 和 GaN 的器件的理解和性能不断提高。这些新材料和设备的应用包括汽车、数据中心电源管理、电网控制、工业和机车牵引控制等。然而，尽管该领域取得了巨大进展，但仍有许多需要了解的地方。这些材料中内在和外在缺陷对器件性能的作用、器件设计和制造的最佳策略、表面钝化和适用于这些材料支持的高电场的介电材料、器件结构以及实现最佳电学的概念性能，适当的热管理方法，