With projected performance advantages over silicon and incumbent wide-bandgap compound semiconductors, gallium oxide (Ga2O3) has garnered worldwide attention as an ultrawide-bandgap semiconductor material suitable for high-voltage, high-temperature, and radiation-hard electronics. Thanks to recent breakthroughs in crystal growth and device processing technologies, the research and development of vertically oriented Ga2O3 power transistors has made rapid strides. In this article, we review the important engineering achievements and performance milestones of the two major types of vertical Ga2O3 transistors—current aperture vertical metal–oxide–semiconductor field-effect transistors (MOSFETs) and vertical fin-channel MOSFETs. Challenges underlying the unique processing approaches to these devices and their implications on device reliability are also discussed.

中文翻译：

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垂直 β -Ga₂O₃ 功率晶体管：综述

氧化镓 (Ga2O3) 作为一种适用于高压、高温和抗辐射电子产品的超宽带隙半导体材料，具有优于硅和现有宽带隙化合物半导体的预期性能优势，已引起全世界的关注。由于近年来晶体生长和器件加工技术的突破，垂直取向的Ga2O3功率晶体管的研发取得了长足的进步。在本文中，我们回顾了两种主要类型的垂直 Ga2O3 晶体管——电流孔径垂直金属氧化物半导体场效应晶体管 (MOSFET) 和垂直鳍沟道 MOSFET 的重要工程成就和性能里程碑。