We present a detailed investigation of the trapping and detrapping mechanisms that take place in the gate region of $\beta $ -Ga₂O₃ vertical finFETs and describe the related processes. This analysis is based on combined pulsed characterization, transient measurements, and tests carried out under monochromatic light, with photon energies between 1.5 and 5 eV. The original results presented in this article demonstrate that: (i) when submitted to positive gate stress with ${V}_{\text{GS}} > 3$ V, the devices show a significant threshold voltage variation; (ii) this effect is not recoverable in 10 000 s in rest condition (zero bias, dark condition). (iii) ${V}_{\text{TH}}$ can quickly recover its initial value when the device is illuminated with UV-C light at 280 nm. (iv) Stress-recovery experiments carried out at different photon energies allowed us to estimate the threshold energy for the release of carriers from the Al₂O₃/Ga₂O₃ interface, and for the injection of electrons from metal to the Al₂O₃ insulator (conduction band discontinuity at the metal/Al₂O₃ interface).

中文翻译：

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通过电光测量研究 β-Ga₂O₃ 垂直 FinFET 中的俘获和释放机制

我们详细研究了发生在栅极区域的捕获和释放机制。 $\beta $ -Ga ₂ O ₃垂直 finFET 并描述相关工艺。该分析基于组合脉冲表征、瞬态测量和在单色光下进行的测试，光子能量在 1.5 到 5 eV 之间。本文中提供的原始结果表明：(i) 当提交给正栅极应力时， ${V}_{\text{GS}} > 3$ V，器件显示出显着的阈值电压变化；(ii) 在静止条件下（零偏置，黑暗条件），这种效应在 10 000 秒内无法恢复。(三) ${V}_{\text{TH}}$ 当器件被 280 nm 的 UV-C 光照射时，可以快速恢复其初始值。(iv) 在不同光子能量下进行的应力恢复实验使我们能够估计载流子从 Al ₂ O ₃ /Ga ₂ O ₃界面释放以及从金属向 Al ₂注入电子的阈值能量O ₃绝缘体（金属/Al ₂ O ₃界面处的导带不连续性）。