We report an experimental demonstration of GaN-based vertical-channel junction field-effect transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition (MOCVD) and a subsequent self-planarization process were developed to fabricate the GaN VC-JFETs. Fin-like channel regions were patterned by electron beam lithography (EBL) and aligned to ${m}$ -plane or ${a}$ -plane. The electrical properties of lateral and vertical p-n junctions were characterized to verify the effectiveness of the p-GaN regrowth. Both VC-JFETs with ${m}$ -plane and ${a}$ -plane channels show decent gate modulation. We further discussed important factors that may affect the device performance including interfacial impurities and nonuniform acceptor distribution. This work highlights the successful demonstration of GaN VC-JFETs and lateral p-n junctions by an etch-then-regrow process, providing valuable information and reference for the further development of GaN power electronics.

中文翻译：

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采用 MOCVD 再生 p-GaN 的 GaN 垂直沟道结型场效应晶体管

我们报告了基于 GaN 的垂直沟道结型场效应晶体管 (VC-JFET) 的实验演示。开发了通过金属有机化学气相沉积 (MOCVD) 再生长的 p-GaN 和随后的自平面化工艺来制造 GaN VC-JFET。鳍状沟道区域通过电子束光刻 (EBL) 图案化并对齐到 ${m}$ -平面或 ${a}$ -飞机。表征横向和垂直 pn 结的电特性以验证 p-GaN 再生长的有效性。两个 VC-JFET 都具有 ${m}$ -平面和 ${a}$ -平面通道显示出不错的门调制。我们进一步讨论了可能影响器件性能的重要因素，包括界面杂质和不均匀的受主分布。这项工作突出了通过蚀刻再生长工艺成功演示了 GaN VC-JFET 和横向 pn 结，为 GaN 电力电子的进一步发展提供了有价值的信息和参考。