Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

中文翻译：

---

2DHG Diamond p-FET在常关、击穿电压超过1.7 kV的共源共栅中的应用

由于其 CH 金刚石表面上的二维空穴气体 (2DHG)，氢封端 (CH) 金刚石具有高电流密度。CH 金刚石金属氧化物半导体场效应晶体管 (MOSFET) 具有高击穿电压特性，但表现出常开操作。出于安全和节能目的，我们使用 CH 金刚石 p 沟道场效应晶体管 (p-FET) 与常关断硅 p-FET 组合制造了金刚石共源共栅。金刚石共源共栅显示常关特性和超过 1.7 kV 的高击穿电压。