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Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2020-08-25 , DOI: 10.1109/ted.2020.3016623
Shih-Ya Lin , Hsiao-Hsuan Liu , Chien-Te Tu , Yu-Shiang Huang , Fang-Liang Lu , C. W. Liu

The distinct photoresponse of the floating channels and the parasitic channels can be a signature to check the existence of the parasitic channel. The photoresponse of the sole parasitic channel mainly shows the photocurrent ( Iph{I}_{\text {ph}} ), while the photoresponse of the sole floating channels without parasitic channel shows the negative threshold voltage shift ( ΔVT\Delta {V}_{\text {T}} ) for nFET. The device with both the floating channels and the parasitic channel shows both photocurrent and negative threshold voltage shift under exposure.

中文翻译:


垂直堆叠 Ge0.98Si0.02 nGAAFET 寄生通道的光学检测



浮动通道和寄生通道的独特光响应可以作为检查寄生通道是否存在的特征。唯一寄生通道的光响应主要表现出光电流( Iph{I}_{\text {ph}} ),而没有寄生通道的唯一浮置通道的光响应则表现出负阈值电压漂移( ΔVT\Delta {V} _{\text {T}} ) 对于 nFET。具有浮动通道和寄生通道的器件在曝光下表现出光电流和负阈值电压偏移。
更新日期:2020-08-25
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