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Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-10-01 , DOI: 10.1109/ted.2020.3016623
Shih-Ya Lin , Hsiao-Hsuan Liu , Chien-Te Tu , Yu-Shiang Huang , Fang-Liang Lu , C. W. Liu

The distinct photoresponse of the floating channels and the parasitic channels can be a signature to check the existence of the parasitic channel. The photoresponse of the sole parasitic channel mainly shows the photocurrent ( ${I}_{\text {ph}}$ ), while the photoresponse of the sole floating channels without parasitic channel shows the negative threshold voltage shift ( $\Delta {V}_{\text {T}}$ ) for nFET. The device with both the floating channels and the parasitic channel shows both photocurrent and negative threshold voltage shift under exposure.

中文翻译:

垂直堆叠的 Ge0.98Si0.02 nGAAFET 寄生通道的光学检测

浮动通道和寄生通道的不同光响应可以作为检查寄生通道是否存在的标志。唯一寄生通道的光响应主要表现为光电流( ${I}_{\text {ph}}$ ),而没有寄生通道的唯一浮动通道的光响应显示出负阈值电压偏移 ( $\Delta {V}_{\text {T}}$ ) 对于 nFET。具有浮动通道和寄生通道的器件在曝光下显示出光电流和负阈值电压偏移。
更新日期:2020-10-01
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