The introduction of graphene (Gr) with high thermal conductivity between GaAs and metal electrode can reduce the internal temperature rise and thermal stress accumulation of high-power chips, such as photoconductive switches, protect the contact electrode, and improve the device stability. Meanwhile, the introduction of graphene has the potential to decrease the interface contact resistance. It is valuable to study the effect of graphene on the contact characteristics of the metal–semiconductor interface. The metallic composite Ni/Ge/Au/Ni/Au was obtained by electron beam evaporation, and the graphene was grown by CVD. The current–voltage ( ${I}$ – ${V}$ ) characteristics of the devices over a high-temperature range 300 K–420 K were measured by a semiconductor parameter analyzer. The Schottky barrier properties of metal/semi-insulating GaAs (M/SI-GaAs) with and without graphene interlayer were analyzed by some analysis techniques, such as forward ${I}$ – ${V}$ and Norde’s methods. It was observed that the barrier heights (BHs) were inhomogeneous in the high-temperature range. The mean BHs were extracted by the experimental BH versus 1/T. We found that the homogeneous BH of M/Gr/SI-GaAs was lower that of M/SI-GaAs. It is helpful to improve the performance of semiconductor devices, as we realized the specific contact resistivity lower by two orders of magnitudes via graphene insertion.

中文翻译：

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引入石墨烯以降低势垒高度并改善金属/SI-GaAs 界面的接触特性

在 GaAs 和金属电极之间引入具有高导热性的石墨烯 (Gr) 可以降低光电导开关等大功率芯片的内部温升和热应力积累，保护接触电极，提高器件稳定性。同时，石墨烯的引入有可能降低界面接触电阻。研究石墨烯对金属-半导体界面接触特性的影响是很有价值的。通过电子束蒸发获得金属复合物Ni/Ge/Au/Ni/Au，并通过CVD生长石墨烯。电流-电压（ ${I}$ —— ${V}$ ) 器件在 300 K–420 K 高温范围内的特性是通过半导体参数分析仪测量的。通过一些分析技术分析了金属/半绝缘 GaAs (M/SI-GaAs) 与石墨烯夹层的肖特基势垒特性，例如正向 ${I}$ —— ${V}$ 和 Norde 的方法。据观察，势垒高度（BHs）在高温范围内是不均匀的。平均 BH 由实验 BH 与 1/T 提取。我们发现 M/Gr/SI-GaAs 的均质 BH 低于 M/SI-GaAs。这有助于提高半导体器件的性能，因为我们通过石墨烯插入实现了比接触电阻率降低了两个数量级。