In order to further improve the electrical characteristics of AlGaN-buffer devices, we propose a new in situ SiN/AlGaN-sandwich-barrier (SWB)/GaN/Al0.05GaN high-electron mobility transistors (HEMTs). The dc, channel temperature, and RF temperature of the proposed AlGaN-buffer devices have been systematically studied and analyzed. The SWB structure can effectively reduce the peak value of the electric field, thus effectively reducing the self-heating effect and improving the breakdown characteristics. Through the channel temperature extraction method of pulsed IV and TCAD thermal simulation, the channel temperature of devices with different barrier structures is compared and analyzed, which proves that SWB structure can effectively reduce the channel temperature of devices. Due to the more obvious potential modulation effect between gate and drain, the ${f}_{\text {max}}$ of device can improve more effectively with the increase of drain voltage. In addition, load-pull measurement at 10 GHz revealed that a saturated power density increased from 7.3 to 8.4 W/mm and an associated PAE increased from 24.9% to 29.4%.

中文翻译：

---

原位 SiN/AlGaN-夹心势垒/GaN/Al0.05GaN HEMT 的 DC、通道温度和 RF 性能分析

为了进一步改善 AlGaN 缓冲器件的电气特性，我们提出了一种新的原位 SiN/AlGaN 夹层势垒 (SWB)/GaN/Al0.05GaN 高电子迁移率晶体管 (HEMT)。已经系统地研究和分析了所提出的 AlGaN 缓冲器件的直流、通道温度和射频温度。SWB结构能有效降低电场峰值，从而有效降低自热效应，提高击穿特性。通过脉冲IV和TCAD热模拟的通道温度提取方法，对不同势垒结构器件的通道温度进行对比分析，证明SWB结构可以有效降低器件的通道温度。由于栅极和漏极之间的电位调制效应更为明显，随着漏极电压的增加，器件的 ${f}_{\text {max}}$ 可以更有效地改善。此外，10 GHz 的负载牵引测量显示饱和功率密度从 7.3 增加到 8.4 W/mm，相关的 PAE 从 24.9% 增加到 29.4%。