This study uses mist atmospheric pressure chemical vapor deposition with deposition/annealing cyclic method to grow ${c}$ -axis aligned crystalline (CAAC) InGaZnO. The material characteristics of the CAAC-InGaZnO are analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, and an ellipsometer to determine the crystal structure, oxygen deficiency, trap energy level, and energy bandgap. The CAAC-InGaZnO thin-film transistor (TFT) shows better electrical performance than the one based on amorphous InGaZnO, including higher field-effect mobility (90.4 cm $^{2}\,\,\text{V}^{-1}\,\,\text{s}^{-1}$ ), lower OFF-state leakage current (16 pA), steeper subthreshold swing (86 mV/dec), and higher on/off current ratio (>10¹⁰). Moreover, the negative bias illumination stress (NBIS) test is used to estimate the stability of the TFT. The threshold voltage of the present CAAC-InGaZnO TFT changes −0.4 V when the TFT is stressed for 10 000 s.

中文翻译：

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通过薄雾大气压化学气相沉积法沉积 c 轴排列的晶体 InGaZnO 用于薄膜晶体管应用

本研究采用雾状常压化学气相沉积和沉积/退火循环法生长 ${c}$ 轴排列的晶体 (CAAC) InGaZnO。通过 X 射线衍射、X 射线光电子能谱、光致发光和椭偏仪分析 CAAC-InGaZnO 的材料特性，以确定晶体结构、氧缺陷、陷阱能级和能带隙。CAAC-InGaZnO 薄膜晶体管 (TFT) 显示出比基于非晶 InGaZnO 的薄膜晶体管更好的电气性能，包括更高的场效应迁移率 (90.4 cm $^{2}\,\,\text{V}^{-1}\,\,\text{s}^{-1}$ )、更低的关态泄漏电流 (16 pA)、更陡峭的亚阈值摆幅 (86 mV/dec) 和更高的开/关电流比 (>10 ¹⁰ )。此外，使用负偏置照明应力 (NBIS) 测试来估计 TFT 的稳定性。当前的 CAAC-InGaZnO TFT 的阈值电压在 TFT 受压 10 000 s 时变化 -0.4 V。