In this article, the effects of two-step annealing at the active layer (AL) and the completed device on the electrical properties and stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) are studied. The subthreshold swing (SS) and stability of a-IGZO TFT devices are greatly improved, and the hump phenomenon under the negative bias illumination stability (NIBS) is particularly well suppressed when the TFT devices are treated with an optimum two-step annealing process (200 °C of preannealing and 300 °C of postannealing). Based on the analysis of the surface morphology, internal chemical state, and electrical properties of the IGZO thin film, an improvement of two-step annealing devices may be due to hydrogen filling the oxygen vacancies in the AL and well passivating the defects between insulating layer and AL. The result illustrates that two-step annealing is a promising method for IGZO TFT, which is not only beneficial to improve the stability of the device but also suppresses the hump phenomenon in NIBS.

中文翻译：

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两步退火对a-IGZO薄膜晶体管高稳定性的影响

在本文中，有源层 (AL) 和成品器件的两步退火对非晶 In-Ga-Zn-O (a-IGZO) 薄膜晶体管 (TFT) 电性能和稳定性的影响是学习了。a-IGZO TFT器件的亚阈值摆幅（SS）和稳定性得到极大改善，当TFT器件经过优化的两步退火工艺处理时，负偏压照明稳定性（NIBS）下的驼峰现象得到了特别好的抑制。 200 °C 的预退火和 300 °C 的后退火）。基于对 IGZO 薄膜的表面形貌、内部化学状态和电学性质的分析，两步退火装置的改进可能是由于氢填充了 AL 中的氧空位并很好地钝化了绝缘层之间的缺陷和AL。