In this study, unique short-circuit failure mechanisms in 1.2-kV SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) at 400 and 800-V dc bias were investigated using experiments and numerical TCAD simulations, taking electrical, thermal, and mechanical stress into account. It was found that the fracture of the interlayer dielectric, caused by high mechanical stress due to different thermal expansion rates, is the source of failure in the 400-V short-circuit transient. The activation of the parasitic bipolar junction transistor under extreme high temperature was confirmed to be the failure mechanism in the 800-V short-circuit transient.

中文翻译：

---

使用电、热和机械应力分析研究 SiC MOSFET 短路故障机制

在这项研究中，使用实验和数值 TCAD 模拟，研究了 1.2 kV SiC 金属氧化物半导体场效应晶体管 (MOSFET) 在 400 和 800 V 直流偏置下的独特短路故障机制，采用电、热和机械应力考虑在内。发现由不同热膨胀率引起的高机械应力引起的层间电介质断裂是 400-V 短路瞬变故障的根源。寄生双极结晶体管在极端高温下的激活被证实是 800-V 短路瞬变中的失效机制。