A dual-gate superjunction insulated gate bipolar transistor (IGBT) (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations. The new structure utilizes the superjunction structure as a controlling port for the strength of conductivity modulation inside the IGBT, so that a low VON{V}_{\text {ON}} is obtained by a strong conductivity modulation during ON-state and a near-unipolar turn-off is achieved by removing the minority carriers before the turn-off event. For this purpose, the p-pillar in the DG-SJ-IGBT is connected to the p-body using a built-in p-channel MOSFET. The primary gate and the auxiliary gate (i.e., gate of p-MOSFET) are controlled by two separate driving signals. In the IGBT’s ON-state, the p-MOSFET disconnects the p-pillar, enabling full conductivity-modulated bipolar conduction and a consequent low VON{V}_{\text {ON}} . As a well-known issue, conductivity modulation is accompanied by significant additional turn-off loss ( EOFF{E}_{\text {OFF}} ). To overcome this issue, the DG-SJ-IGBT takes advantage of the p-pillar which extends through the entire drift region. Before the IGBT’s turn-off event, the p-MOSFET electrically grounds the p-pillar to the p-body. The grounded p-pillar serves as a hole extractor, suppresses the minority carrier density throughout the depth of the drift region, and brings the device into a near-unipolar conduction mode. Thus, a near-unipolar turn-off can be obtained, resulting in a low EOFF{E}_{\text {OFF}} .

中文翻译：

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具有由两个独立驱动信号主动控制的电导率调制的超结 IGBT


提出了一种双栅极超结绝缘栅双极晶体管 (IGBT) (DG-SJ-IGBT)，并通过数值 TCAD 仿真进行了研究。新结构利用超结结构作为IGBT内部电导调制强度的控制端口，从而通过导通状态下的强电导调制获得低VON{V}_{\text {ON}}，近单极关断是通过在关断事件之前去除少数载流子来实现的。为此，DG-SJ-IGBT 中的 p 柱使用内置 p 沟道 MOSFET 连接到 p 体。主栅极和辅助栅极（即p-MOSFET的栅极）由两个单独的驱动信号控制。在 IGBT 的导通状态下，p-MOSFET 断开 p 柱，从而实现完全电导率调制双极导通，从而实现低 VON{V}_{\text {ON}} 。作为一个众所周知的问题，电导调制伴随着显着的额外关断损耗 ( EOFF{E}_{\text {OFF}} )。为了克服这个问题，DG-SJ-IGBT 利用了延伸穿过整个漂移区的 p 柱。在 IGBT 关断事件之前，p-MOSFET 将 p 柱与 p 体电接地。接地的 p 柱充当空穴提取器，抑制整个漂移区深度的少数载流子密度，并使器件进入近单极传导模式。因此，可以获得接近单极的关断，从而产生较低的 EOFF{E}_{\text {OFF}} 。