In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET using this method can effectively and quickly reduce the internal high electric field, thereby reducing the temperature. Under the condition of a LET value of 0.5 pC/ $\mu \text{m}$ and a drain voltage of 1200 V, the maximum drain current is 0.168 A, and the maximum global device temperature is 1724 K, which is much lower than the melting down temperature of silicon carbide (SiC) (3100 K). The hardening method in this article can be applied to different breakdown voltages by adjusting structure parameters.

中文翻译：

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碳化硅功率 MOSFET 器件中的单次烧断硬化方法和评估

在本文中，提出并通过二维数值模拟研究了一种在高线性能量传递 (LET) 值范围内进行单粒子烧毁 (SEB) 硬化的方法。对采用这种方法的改进型 MOSFET 与传统 MOSFET 进行了分析和比较，以评估该方法的有效性。仿真结果表明，与常规MOSFET相比，采用该方法的改进型MOSFET可以有效快速地降低内部高电场，从而降低温度。在LET值为0.5 pC/ $\mu \text{m}$和漏极电压1200 V的条件下，最大漏极电流为0.168 A，最大全局器件温度为1724 K，低得多高于碳化硅 (SiC) (3100 K) 的熔化温度。