In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Different from Schottky barrier (SB) MOSFET which use lower Schottky barrier to produces the thermionic emission current, the proposed HSB –BTFET utilizes higher Schottky barrier to minimize the thermionic emission current and adopts bilateral gate to generate a strong band-to-band tunneling (BTBT) current which works as the conduction mechanism of the forward current. An assistant gate is introduced which efficiently blocks the reverse biased leakage current. Compared to SB MOSFET, HSB-BTFET can realize lower subthreshold swing, much smaller leakage current, higher $\text{I}_{\mathrm{ on}}-{\mathrm{ I}}_{\mathrm{ off}}$ ratio, compared to TFET, it can realize larger forward current. Besides the device symmetry, it’s more compatible with MOSFET technology. The function and influence of the Schottky barrier height have been analyzed.

中文翻译：

---

一种新型的基于高肖特基势垒的双向栅极和辅助栅极控制的双向隧道场效应晶体管

在本文中，我们提出了一种基于双边栅极和辅助栅极控制的双向隧道场效应晶体管 (HSB-BTFET) 的高肖特基势垒源极/漏极接触。与使用较低肖特基势垒来产生热离子发射电流的肖特基势垒 (SB) MOSFET 不同，所提出的 HSB –BTFET 利用较高的肖特基势垒来最小化热离子发射电流，并采用双边栅极产生强带间隧穿（ BTBT) 电流，作为正向电流的传导机制。引入了一个辅助栅极，可以有效地阻止反向偏置漏电流。与SB MOSFET相比，HSB-BTFET可以实现更低的亚阈值摆幅，更小的漏电流，更高的$\text{I}_{\mathrm{ on}}-{\mathrm{ I}}_{\mathrm{ off}} $ 比率，与 TFET 相比，可以实现更大的正向电流。除了器件对称性，它更兼容 MOSFET 技术。分析了肖特基势垒高度的作用和影响。