A novel approach to fabricate efficient nitride light-emitting diodes (LEDs) grown on gallium polar surface operating at cryogenic temperatures is presented. We investigate and compare LEDs with standard construction with structures where p-n junction field is inverted through the use of bottom tunnel junction (BTJ). BTJ LEDs show improved turn on voltage, reduced parasitic recombination and increased quantum efficiency at cryogenic temperatures. This is achieved by moving to low resistivity n-type contacts and nitrogen polar-like built-in field with respect to current flow. It inhibits the electron overflow past quantum wells and improves hole injection even at T=12K. Therefore, as cryogenic light sources, BTJ LEDs offer significantly enhanced performance over standard LEDs.

中文翻译：

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用于低温的氮化物发光二极管

提出了一种新颖的方法来制造在低温运行的镓极性表面上生长的高效氮化物发光二极管（LED）。我们研究并比较了具有标准结构的LED，这些结构具有通过使用底部隧道结（BTJ）反转pn结场的结构。BTJ LED在低温下显示出改善的导通电压，减少的寄生复合以及增加的量子效率。这是通过相对于电流移动到低电阻率的n型触点和类似氮极的内置磁场来实现的。即使在T = 12K时，它也能抑制电子溢出量子阱，并改善空穴注入。因此，BTJ LED作为低温光源，其性能大大超过了标准LED。