We present dispersions of WS2 and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices. An all-inkjet-printing approach was used to print graphene-h-BN-graphene capacitors along with graphene-WS2-graphene structures. As the number of passes for inkjet printing the h-BN layer within graphene electrodes was increased, the leakage currents successively decreased. The capacitance-frequency (C-f) measurement data for the printed capacitor (with 40 passes of h-BN) within graphene electrodes showed that at ∼1 kHz, the maximum capacitance was ∼62 pF, and with increasing frequency, the capacitance value decreases. The inkjet printed graphene-WS2-graphene heterostructure devices were also constructed using horn tip sonication, where the C-f measurements revealed that C as high as ∼324.88 pF was attainable, which was largely frequency independent up to ∼20 kHz. This is in contrast with the h-BN layer integrated with graphene electrodes, where the measured C was more than ∼5 times lower over the range of frequencies tested and also exhibited a strong decay as frequency increased from 1 kHz.

中文翻译：

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用于石墨烯电容结构的介电 h-BN 和半导体 WS2 油墨

我们使用环己酮和萜品醇作为溶剂来呈现 WS2 和 h-BN 的分散体，以随后打印原型电容纳米器件。使用全喷墨打印方法打印石墨烯-h-BN-石墨烯电容器以及石墨烯-WS2-石墨烯结构。随着在石墨烯电极内喷墨印刷 h-BN 层的次数增加，漏电流逐渐降低。石墨烯电极内印刷电容器（h-BN 40 次通过）的电容-频率（Cf）测量数据表明，在~1 kHz 时，最大电容为~62 pF，并且随着频率的增加，电容值减小。喷墨打印的石墨烯-WS2-石墨烯异质结构器件也使用喇叭尖端超声处理构建，其中 Cf 测量显示 C 高达~324。可以达到 88 pF，这在很大程度上与频率无关，最高可达 20 kHz。这与与石墨烯电极集成的 h-BN 层形成对比，其中测量的 C 在测试的频率范围内低约 5 倍以上，并且随着频率从 1 kHz 增加也表现出强烈的衰减。