In this study, Si-doped conductive AlInN films with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition. A high net donor concentration of approximately 1 × 1019 cm−3 was observed for a highly Si-doped AlInN film. To evaluate its vertical-direction electrical resistivity without being affected by polarization-induced carriers, the transfer length measurement (TLM) model was applied to two kinds of test element groups. By analyzing the TLM results, the vertical-direction resistivity of the 300-nm-thick n-type AlInN film was estimated to be 5.8 × 10−4 Ω cm2.

中文翻译：

---

通过有机金属化学气相沉积在蓝宝石上生长与 c 面 GaN 几乎晶格匹配的 Si 掺杂导电 AlInN 薄膜的电气特性

在这项研究中，厚度为 300 nm 的 Si 掺杂导电 AlInN 薄膜通过金属有机化学气相沉积生长，几乎与 c 面 GaN-on-sapphire 模板晶格匹配。对于高度 Si 掺杂的 AlInN 薄膜，观察到大约 1 × 1019 cm-3 的高净供体浓度。为了在不受极化诱导载流子影响的情况下评估其垂直方向电阻率，将传输长度测量（TLM）模型应用于两种测试元件组。通过分析 TLM 结果，300 nm 厚的 n 型 AlInN 膜的垂直方向电阻率估计为 5.8 × 10-4 Ω cm2。