This work explores quantitative boron depth profiling in the top first nanometer using dynamic secondary ion mass spectrometry (SIMS). Dynamic SIMS measurements were performed with a magnetic sector CAMECA IMS Wf/SC Ultra, using extremely low impact energy O2+ (below 250 eV) sputtering. It was concluded that the modification of quantification protocol by the creation of a surface transient curve can provide a tool for the accurate characterization of low energy implantation wafers, including boron, under extremely low energy sputtering conditions with an oxygen beam.

中文翻译：

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过程控制超低冲击能量SIMS数据约简算法的改进

这项工作使用动态二次离子质谱法 (SIMS) 探索了顶部第一个纳米中的定量硼深度分析。动态 SIMS 测量是使用扇形磁场 CAMECA IMS Wf/SC Ultra 进行的，使用极低的冲击能量 O2+（低于 250 eV）溅射。得出的结论是，通过创建表面瞬态曲线来修改量化协议可以提供一种工具，用于在极低能量溅射条件下用氧束精确表征低能量注入晶片，包括硼。