Lead-free perovskite layers may provide a good alternative to the commonly used lead-halide-based perovskite absorber layers in photovoltaics. Energy level alignment of the active semiconductor with contact layers is a key factor in device performance. Kelvin probe force microscopy was used during vapor deposition of C60 onto formamidinium tin iodide to investigate contact formation with detailed local resolution of these materials that are significant for photovoltaic cells. Significant differences dependent on the growth rate of C60 were detected. Sufficiently high deposition rates were essential to reach compact C60 films needed for good contact. A space charge layer larger than 90 nm within the C60 layer was established without indication of interfacial dipoles. The present analysis gives a clear indication of a well-functioning contact of fullerenes to formamidinium tin iodide that is suitable for the use in photovoltaic devices provided that thin compact fullerene films are formed.

无铅钙钛矿层可以为光伏中常用的基于卤化铅的钙钛矿吸收层提供一个很好的选择。有源半导体与接触层的能级对准是器件性能的关键因素。在将C 60气相沉积到碘化tin锡上的过程中，使用了开尔文探针力显微镜技术，以详细的局部分辨率研究了这些触点的形成，这对于光伏电池非常重要。检测到取决于C 60的生长速率的显着差异。足够高的沉积速率对于获得良好接触所需的致密C 60薄膜至关重要。C 60内大于90 nm的空间电荷层建立层而没有界面偶极子的指示。本分析清楚地表明了富勒烯与甲form碘化锡的良好功能接触，如果形成了薄的致密富勒烯薄膜，则适合用于光伏器件。