An all-carbon memristive synapse is highly desirable for hardware implementation in future wearable neuromorphic computing systems. Graphene oxide (GO) can exhibit resistive switching (RS) and may be a feasible candidate to achieve this objective. However, the digital-type RS often occurring in GO-based memristors restricts the biorealistic emulation of synaptic functions. Here, an all-carbon memristive synapse with analog-type RS behavior was demonstrated through photoreduction of GO and N-doped carbon quantum dot (NCQD) nanocomposites. Ultraviolet light irradiation induced the local reduction of GO near the NCQDs, therefore forming multiple weak conductive filaments and demonstrating analog RS with a continuous conductance change. This analog RS enabled the close emulation of several essential synaptic plasticity behaviors; more importantly, the high linearity of the conductance change also facilitated the implementation of pattern recognition with high accuracy. Furthermore, the all-carbon memristive synapse can be transferred onto diverse substrates, showing good flexibility and 3D conformality. Memristive potentiation/depression was stably performed at 450 K, indicating the resistance of the synapse to high temperature. The photoreduction method provides a new path for the fabrication of all-carbon memristive synapses, which supports the development of wearable neuromorphic electronics.

对于未来可穿戴神经形态计算系统中的硬件实现，全碳忆阻突触是非常理想的。氧化石墨烯（GO）可以表现出电阻转换（RS），并且可能是实现此目标的可行选择。但是，通常在基于GO的忆阻器中出现的数字型RS限制了突触功能的生物现实仿真。在这里，通过GO和N掺杂的碳量子点（NCQD）纳米复合材料的光还原证明了具有类似RS行为的全碳忆阻突触。紫外线辐照诱导了NCQD附近GO的局部减少，因此形成了多个弱导电丝，并证明了具有连续电导变化的模拟RS。该模拟RS能够紧密模拟几种必要的突触可塑性行为。更重要的是，电导变化的高线性度也促进了高精度模式识别的实现。此外，全碳忆阻突触可转移到各种基质上，表现出良好的柔韧性和3D保形性。忆阻增强/抑制在450 K下稳定执行，表明突触对高温具有抵抗力。光还原法为全碳忆阻突触的制造提供了一条新途径，这支持了可穿戴神经形态电子学的发展。忆阻增强/抑制在450 K下稳定执行，表明突触对高温具有抵抗力。光还原法为全碳忆阻突触的制造提供了一条新途径，这支持了可穿戴神经形态电子学的发展。忆阻增强/抑制在450 K下稳定执行，表明突触对高温具有抵抗力。光还原法为全碳忆阻突触的制造提供了一条新途径，这支持了可穿戴神经形态电子学的发展。