Abstract Solid polymer electrolyte gate dielectric based on cross-linked poly(ethylene oxide) (CPEO) was developed and employed for organic thin-film transistors (OTFTs). Mechanical stability, high areal capacitance, and amorphous morphology of CPEO were achieved via the use of polyhedral oligomeric silsesquioxane (POSS) as cross-linker, dissolved ion [EMIM][TFSI] as electrolyte, and PEO with low molecular weight as polymer matrix, respectively. The resulting solid polymer electrolyte showed excellent insulating properties with low leakage current density (1.8 × 10−7 A cm−2 at 1 V) and high capacitance per area (∼ 1 μF cm−2 at 100 Hz). Furthermore, dielectric properties of the developed polymer electrolytes including ionic conductivity as well as segmental relaxation time were investigated. The polyelectrolyte dielectric was employed for bottom-gate/top-contact organic thin-film transistors and the resulting devices showed decent electrical performance with a carrier mobility of 0.12 (±0.03) cm2 V−1 s−1 and a current on/off ratio of 103 at low operating voltage of 5 V.

中文翻译：

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用于有机薄膜晶体管的固体交联聚（环氧乙烷）电解质栅极电介质

摘要 基于交联聚环氧乙烷 (CPEO) 的固体聚合物电解质栅极电介质被开发并用于有机薄膜晶体管 (OTFT)。通过使用多面体低聚倍半硅氧烷 (POSS) 作为交联剂、溶解离子 [EMIM][TFSI] 作为电解质和低分子量 PEO 作为聚合物基质，实现了 CPEO 的机械稳定性、高面积电容和无定形形态，分别。所得固体聚合物电解质显示出优异的绝缘性能，具有低漏电流密度（1 V 时为 1.8 × 10-7 A cm-2）和单位面积高电容（100 Hz 时约 1 μF cm-2）。此外，研究了所开发的聚合物电解质的介电性能，包括离子电导率和段弛豫时间。