Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A/W to 0.3 A/W. A corresponding maximum EQE of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.

中文翻译：

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BN/BP 接口工程的高性能 IGZO 基光电晶体管

近年来，在开发用于光电应用的由铟镓锌氧化物 (a-IGZO) 薄膜和二维 (2D) 范德华材料组成的异质结方面取得了一些进展，然而，通过构建这样的异质结的报道很少。在这里，我们报告了通过引入氮化硼 (BN)/黑磷 (BP) 界面工程，IGZO 光电晶体管器件的光响应性能得到了巨大改进。通过在 IGZO 和 BP 之间创建适当的能带弯曲和有效的光生载流子传输路径，可以显着抑制 IGZO 通道中光生载流子的复合。结果，447nm波长的相应光响应度可以从0.05 A/W提升到0.3 A/W。BN/BP 装饰的 IGZO 光电晶体管相应的最大 EQE 为 83.4%。结果表明，这种通过二维材料进行的界面工程可以用作高性能氧化物半导体基光电器件的一般途径。