High-performance solar-blind separate absorption and multiplication avalanche photodiodes (SAM-APDs) were fabricated based on a p-NiO/MgO/n-ZnO dual heterojunction structure. The prepared SAM-APDs exhibited a separated absorption and multiplication structure that used NiO and ZnO as absorption layers, and ultrawide-bandgap MgO as a multiplication layer. When the reverse-bias voltage exceeded 6 V, carrier avalanche multiplication occurred, and the avalanche gain reached a high value of 2.7 × 103, corresponding to a 1120% quantum efficiency, at a reverse-bias voltage of 10 V. These solar-blind SAM-APDs had an ultraviolet (UV) (310 nm)/visible (500 nm) rejection ratio as high as 563.6 at a 2 V reverse-bias voltage. These features render the SAM-APDs highly suitable for practical applications as UV solar-blind photodetectors.

中文翻译：

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基于 p-NiO/MgO/n-ZnO 异质结构的分离吸收和倍增日盲光电二极管

基于 p-NiO/MgO/n-ZnO 双异质结结构制造了高性能日盲分离吸收和倍增雪崩光电二极管 (SAM-APD)。制备的SAM-APDs表现出分离的吸收和倍增结构，使用NiO和ZnO作为吸收层，超宽带隙MgO作为倍增层。当反向偏置电压超过 6 V 时，发生载流子雪崩倍增，在反向偏置电压为 10 V 时，雪崩增益达到 2.7 × 103 的高值，对应于 1120% 的量子效率。 SAM-APD 在 2 V 反向偏置电压下具有高达 563.6 的紫外线 (UV) (310 nm)/可见光 (500 nm) 抑制比。这些特性使 SAM-APD 非常适合作为紫外日盲光电探测器的实际应用。