A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS2 nanosheet/ perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on MoS2 channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than 10 is obtained. When VIN is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the VOUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.

中文翻译：

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具有放大电压输出的基于 MoS2/并五苯混合互补逆变器的光电探测器

已经展示了一种基于新型混合 CMOS 反相器的灵敏光电检测。不同于普通的光电流型光电探测器将光信号转换为电流，CMOS反相器实现了电压输出，克服了nA范围内电流信号监测的困难。混合 CMOS 逻辑反相器采用平面结构的 n 沟道 MoS2 纳米片/钙钛矿异质结 FET 和 p 沟道有机并五苯 FET。为了获得高性能，我们采用并五苯 FET 的叉指电极来提高 p 沟道的电流密度，并在 MoS2 沟道上堆叠钙钛矿来修改 n 沟道的阈值电压。结果，得到了电压增益大于10的CMOS反相器。当 VIN 在转换电压 (-38 V) 附近时，逆变器可以获得稳定的光检测信号，VOUT从暗处的6V变为633nm光照下的1V。这一发现表明了基于逆变器制造具有电压输出的可见光检测装置的潜力，并且可能进一步适用于光逻辑电路。