Silicon nitrides deposited by capacitively coupled plasma (CCP)-type plasma enhanced atomic layer deposition (PEALD) are currently applied to nanoscale semiconductor devices and are investigated for potential applications to flexible displays, etc. and, during PEALD, 13.56MHz rf power is generally employed for the reactive gas plasma generation. In this study, the effects of a higher plasma generation frequency of 162 MHz on the plasma characteristics and silicon nitride film characteristics were investigated for the silicon nitride PEALD using bis(diethylamino)silane (BDEAS) as the silicon precursor and N2plasma as the reactant gas. The PEALD silicon nitride film deposited using the 162 MHz CCP showed better film characteristics such as lower surface roughness, lower carbon percentage, higher N/Si ratio, lower wet etch rate in a diluted HF solution, lower leakage current and higher electric breakdown field, more uniform step coverage of the silicon nitride film deposited in a high aspect ratio trench, etc. compared to the PEALD silicon nitride deposited using the 13.56 MHz CCP. The improved PEALD silicon nitride film characteristics are believed to be related to the higher ion density, higher reactive gas dissociation, and lower ion bombardment energy to the substrate for the N2plasma observed with the 162 MHz CCP compared to that observed with the 13.56 MHz CCP.

中文翻译：

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双(二乙氨基)硅烷超高频(162MHz)-等离子体增强原子层沉积氮化硅的特性

通过电容耦合等离子体（CCP）型等离子体增强原子层沉积（PEALD）沉积的氮化硅目前应用于纳米级半导体器件，并正在研究其在柔性显示器等方面的潜在应用，在 PEALD 期间，射频功率通常为 13.56MHz用于反应气体等离子体的产生。在这项研究中，以双（二乙氨基）硅烷（BDEAS）为硅前驱体，N2等离子体为反应气体，研究了 162 MHz 的较高等离子体产生频率对氮化硅 PEALD 的等离子体特性和氮化硅薄膜特性的影响。 . 使用 162 MHz CCP 沉积的 PEALD 氮化硅薄膜表现出更好的薄膜特性，例如更低的表面粗糙度、更低的碳百分比、更高的 N/Si 比、与使用 13.56 MHz CCP 沉积的 PEALD 氮化硅相比，在稀释的 HF 溶液中的湿法蚀刻速率更低、漏电流更低、击穿电场更高、在高纵横比沟槽中沉积的氮化硅薄膜的阶梯覆盖更均匀等. 与使用 13.56 MHz CCP 观察到的相比，使用 162 MHz CCP 观察到的 N2 等离子体的改进的 PEALD 氮化硅膜特性被认为与更高的离子密度、更高的反应性气体离解和更低的对衬底的离子轰击能量有关。