Monolayer MoS2 possesses good electron mobility, structural flexibility and a direct band gap, enabling it to be a promising candidate for flexible and wearable optoelectronic devices. In this article, the lateral monolayer MoS2 homojunctions were prepared by nitrogen plasma selective doping technique. The monolayer MoS2 thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy. The electronic and photoelectric properties of the lateral pn and npn homojunctions were discussed. The results showed that the rectifying ratio of the pn homojunction diode is ~10^3. As a photodetector of pn homojunction, the optical responsivity is up to 48.5 A/W, the external quantum efficiency is 11301%, the detectivity is ~10^9 Jones and the response time is 20 ms with the laser of 532 nm and the reverse bias voltage of 10V. As a bipolar junction transistor (BJT) of npn homojunction, the amplification coefficient reached ~10^2. A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS2 based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits.

中文翻译：

---

氮等离子掺杂制备横向单层二硫化钼同质结器件

单层 MoS2 具有良好的电子迁移率、结构灵活性和直接带隙，使其成为柔性和可穿戴光电器件的有希望的候选者。在本文中，横向单层 MoS2 同质结是通过氮等离子体选择性掺杂技术制备的。单层二硫化钼薄膜是通过化学气相沉积合成的，并通过光致发光、原子力显微镜和拉曼光谱进行表征。讨论了横向 pn 和 npn 同质结的电子和光电特性。结果表明，pn同质结二极管的整流比为~10^3。作为pn同质结光电探测器，光响应度高达48.5 A/W，外量子效率为11301%，探测率约为 10^9 琼斯，响应时间为 20 毫秒，激光波长为 532 nm，反向偏置电压为 10V。作为npn同质结的双极结型晶体管（BJT），放大系数达到~10^2。利用与传统CMOS工艺兼容的可控等离子体掺杂技术实现单层MoS2基pn和npn同质结，推动了二维材料在电子、光电器件和电路中的潜在应用。