Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

中文翻译：

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基于EBL和IBL的纳米电子器件的最新进展

电子束光刻（EBL）和离子束光刻（IBL）由于其出色的物理和电子特性，是用于构建纳米电子设备的极有前途的纳米加工技术。在这篇综述中，对EBL和IBL进行了概述，并对基于四种材料（石墨烯，ZnO，TiO2和Ge）制造的纳米电子学进行了比较。在每种类型的材料中，插图中还提供了许多实际示例。稍后，详细介绍了EBL和IBL的优缺点。最后，讨论并总结了两种技术之间的异同。