Violet semipolar (20-2-1) InGaN microcavity light-emitting diodes (MC-LED) with a 200 nm ultra-short cavity length were demonstrated. The emission wavelength was 419 nm with a spectrum width of 20 nm. The external quantum efficiency (EQE) of MC-LED was constant at 0.8% for a forward current from 0.5 to 2 mA with the emitting area of 30×30 µm². With increasing forward current, the peak wavelength and spectrum width of the emission showed almost no changes. For epitaxial growth, metal-organic chemical vapor deposition (MOCVD) was used. Substrate removal and tunnel-junction with an Ag-based electrode made possible the fabrication of the ultra-short 200 nm thick cavity MC-LED. This is more than a factor of 2 improvement compared to previous MC-LEDs of 450 nm cavity thickness sustaining 5 modes.

中文翻译：

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具有200 nm超短腔长的紫光半极性（20-2-1）InGaN微腔发光二极管

对具有200 nm超短腔长的紫光半极性（20-2-1）InGaN微腔发光二极管（MC-LED）进行了演示。发射波长为419nm，光谱宽度为20nm。对于发射电流为30×30 µm ²的正向电流（0.5至2 mA），MC-LED的外部量子效率（EQE）恒定为0.8％。随着正向电流的增加，发射的峰值波长和光谱宽度几乎没有变化。对于外延生长，使用了金属有机化学气相沉积（MOCVD）。基板的去除和使用基于Ag的电极的隧道结使超短200 nm厚腔MC-LED的制造成为可能。与先前的450 nm腔体厚度的MC-LED维持5种模式相比，这种改善超过2倍。