InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100),ACS Photonics

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InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)
ACS Photonics ( IF 6.5 ) Pub Date : 2020-09-23 , DOI: 10.1021/acsphotonics.0c01061
Rui Zhou _{1,

2} , Meixin Feng _{1,

2,

3} , Jin Wang ₁ , Qian Sun _{1,

2,

3} , Jianxun Liu ₁ , Shuming Zhang _{1,

2,

3} , Masao Ikeda ₁ , Tong Liu ₄ , Zengli Huang ₄ , Xing Sheng ₅ , Hui Yang _{1,

2,

3,

4}

Affiliation

Highly efficient electrically injected light source on exact Si(100) has been the bottleneck of Si photonics for decades. InGaN-based laser with a direct bandgap may serve as an efficient on-chip light source. But InGaN-based laser with a p-side ridge waveguide usually has a large electrical resistance and operation voltage, converting electricity into excessive Joule heat. The low wall plug efficiency, together with a large thermal resistance, leads to a high junction temperature, severely degrading device performance. Here, we proposed and fabricated a new laser structure with the ridge waveguide inverted from p-side to n-side. The differential electrical resistance and threshold voltage were slashed by 48% and 1.4 V, respectively. The thermal resistance and junction temperature were also reduced by 8 K/W and 25 °C, respectively. As a result, InGaN-based laser on exact Si(100) has been demonstrated under room-temperature continuous-wave current injection, which is fully compatible with Si-based microelectronics and a photonics platform.

中文翻译：

反向脊形波导异质集成在Si（100）上的基于InGaN的激光器

几十年来，精确的Si（100）上的高效电注入光源一直是Si光子学的瓶颈。具有直接带隙的基于InGaN的激光器可以用作高效的芯片上光源。但是，带有p侧脊形波导的InGaN基激光器通常具有较大的电阻和工作电压，从而将电转化为过多的焦耳热。墙插效率低，加上大的热阻，导致结温高，严重影响器件性能。在这里，我们提出并制造了一种新的激光器结构，其中脊形波导从p侧翻转到n侧。差分电阻和阈值电压分别降低了48％和1.4V。热阻和结温也分别降低了8 K / W和25°C。结果是，

更新日期：2020-10-21

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