Nickel oxide (NiO) films cover numerous electronic applications, including transparent conducting oxides and hole transport layer, because of its high transparency and wide band gap. A sparking discharge is a new and unique method for the deposition of NiO films due to non-complex operation and non-requirement of a vacuum atmosphere. Unfortunately, NiO films by the sparking method display a porous surface with inferior crystallinity. By assisting a uniform magnetic field in the sparking method, the porous and the crystallinity of NiO are improved. However, electrical properties of the NiO films deposited by this strategy are poor. In order to improve the electrical properties of NiO, a substitutional of Ni ions by Co ions is considered. In this study, we report an influence of Co concentration on properties of NiO films by sparking under a uniform magnetic field. Our results indicate that an increase in Co concentration to 0.1 M improves the crystallinity and increases a carrier concentration of NiO, resulting in a reduction of the resistivity. This consequence is in agreement with the increase in a number of higher-valence Ni³⁺ because of the Co²⁺ substituted Ni²⁺. Based on our research, Co-NiO film is promising materials for a transparent conductor.

氧化镍 (NiO) 薄膜因其高透明度和宽带隙而涵盖了众多电子应用，包括透明导电氧化物和空穴传输层。由于操作不复杂且不需要真空气氛，火花放电是沉积 NiO 薄膜的一种新颖且独特的方法。不幸的是，通过火花法制备的 NiO 薄膜显示出多孔表面，结晶度较差。通过在火花法中辅助均匀磁场，改善了NiO的多孔性和结晶度。然而，通过这种策略沉积的NiO薄膜的电性能较差。为了提高NiO的电性能，考虑用Co离子替代Ni离子。在这项研究中，我们报告了 Co 浓度对均匀磁场下火花放电 NiO 薄膜性能的影响。我们的结果表明，Co 浓度增加到 0.1 M 可以改善结晶度并增加 NiO 的载流子浓度，从而导致电阻率降低。该结果与由于Co ²⁺取代Ni ²⁺而导致高价Ni ³⁺数量的增加一致。根据我们的研究，Co-NiO 薄膜是一种很有前途的透明导体材料。