Room‐temperature continuous wave (RT‐CW) electrically pumped 1550 nm indium phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide‐semiconductor (CMOS) compatible silicon (Si) substrates by direct heteroepitaxy. Dynamic properties are investigated by gain switching and small signal modulation measurements. A maximum 3 dB bandwidth of 5.3 GHz is demonstrated, along with a narrow optical pulse with a width of 1.5 ns. The dark current density of 490 mA cm⁻² at −1 V bias is an order of magnitude higher than identical devices grown and fabricated on native InP substrates. Also, reliability measurements and failure analysis are carried out for the lasers on Si. The lasers operate stably over 200 hours (h) at 10 °C under CW operation without apparent change in threshold or output power. In sharp contrast, a rapid failure occurs at 60 °C under pulsed operation following 5.6 h of aging. To further improve device characteristics for lasers on Si, the dislocation density of the InP template is reduced by introducing a 2 μm‐thick compositionally graded In_0.4Ga_0.6 As buffer. The resulting surface defect density is as low as 4.5 × 10⁷ cm⁻², which is expected to improve the performance and reliability of long wavelength lasers grown directly on Si.

中文翻译：

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在硅上整体生长的1550 nm激光二极管的激光特性和可靠性

室温连续波（RT-CW）电动泵浦的基于1550 nm磷化铟（InP）的激光二极管通过直接异质外延在互补金属氧化物半导体（CMOS）兼容硅（Si）基板上实现。通过增益切换和小信号调制测量来研究动态特性。展示了5.3 GHz的最大3 dB带宽，以及1.5 ns宽度的窄光脉冲。暗电流密度为490 mA cm ^-2在-1 V偏置下的偏压比在天然InP衬底上生长和制造的相同器件高一个数量级。同样，对Si上的激光器进行可靠性测量和故障分析。激光器在连续波操作下于10°C在200°h下稳定运行，而阈值或输出功率没有明显变化。与之形成鲜明对比的是，老化5.6小时后，在脉冲操作下于60°C时会发生快速故障。为了进一步改善在Si上的激光器的器件特性，通过引入2μm厚的成分分级的In _0.4 Ga _0.6  As缓冲液来降低InP模板的位错密度。产生的表面缺陷密度低至4.5×10 ⁷  cm ^-2有望改善直接在Si上生长的长波长激光器的性能和可靠性。