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High‐Temperature Annealing of AlGaN
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-09-24 , DOI: 10.1002/pssa.202000473 Sylvia Hagedorn 1 , Taimoor Khan 1 , Carsten Netzel 1 , Carsten Hartmann 2 , Sebastian Walde 1 , Markus Weyers 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-09-24 , DOI: 10.1002/pssa.202000473 Sylvia Hagedorn 1 , Taimoor Khan 1 , Carsten Netzel 1 , Carsten Hartmann 2 , Sebastian Walde 1 , Markus Weyers 1
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In the past few years, high‐temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the example of Al0.77Ga0.23N is used to investigate whether annealing can also improve the material quality of the ternary alloy. A detailed analysis of the influence of annealing temperature on structural and optical material properties is presented. It is found that with increasing annealing temperature, the threading dislocation density can be lowered from an initial value of 6.0 × 109 down to 2.6 × 109 cm−2. Ga depletion at the AlGaN surface and Ga diffusion into the AlN buffer layer are observed. After annealing, the defect luminescence between 3 and 4 eV is increased, accompanied by an increase in the oxygen concentration by about two orders of magnitude. Furthermore, due to annealing optical absorption at 325 nm (3.8 eV) occurs, which increases with increasing annealing temperature. It is assumed that the reason for this decrease in ultraviolet (UV) transmittance is the increasing number of vacancies caused by the removal of group‐III and N atoms from the AlGaN lattice during annealing.
中文翻译：
AlGaN的高温退火
在过去的几年中，AlN的高温退火已成为为AlN层提供低位错密度的一种行之有效的方法。在此，以Al 0.77 Ga 0.23 N为例来研究退火是否也可以改善三元合金的材料质量。给出了退火温度对结构和光学材料性能影响的详细分析。发现随着退火温度的升高，穿线位错密度可以从初始值6.0×10 9降低到2.6×10 9 cm -2。观察到AlGaN表面上的Ga耗尽和Ga扩散到AlN缓冲层中。退火后，3至4 eV之间的缺陷发光增加，同时氧气浓度增加了大约两个数量级。此外，由于退火，在325 nm（3.8 eV）处发生光吸收，该吸收随着退火温度的升高而增加。可以认为，紫外线（UV）透射率降低的原因是退火期间从AlGaN晶格中去除了III和N原子导致的空位数量增加。
更新日期：2020-09-24
中文翻译：
AlGaN的高温退火
在过去的几年中，AlN的高温退火已成为为AlN层提供低位错密度的一种行之有效的方法。在此，以Al 0.77 Ga 0.23 N为例来研究退火是否也可以改善三元合金的材料质量。给出了退火温度对结构和光学材料性能影响的详细分析。发现随着退火温度的升高，穿线位错密度可以从初始值6.0×10 9降低到2.6×10 9 cm -2。观察到AlGaN表面上的Ga耗尽和Ga扩散到AlN缓冲层中。退火后，3至4 eV之间的缺陷发光增加，同时氧气浓度增加了大约两个数量级。此外，由于退火，在325 nm（3.8 eV）处发生光吸收，该吸收随着退火温度的升高而增加。可以认为，紫外线（UV）透射率降低的原因是退火期间从AlGaN晶格中去除了III和N原子导致的空位数量增加。
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