This paper presents an accurate, comprehensive and physics-based aging compact model for stress-induced degradation due to hot-carrier generation and oxide trapping in advanced complementary NPN and PNP SiGe HBTs. The analytical model equations are derived from the solution of reaction-diffusion theory and Fick’s law of diffusion combined with oxide trapping mechanism under accelerated stress conditions. The model accuracy has been validated against results from long-term aging tests performed close to the safe-operating-areas of an advanced complementary 0.25 µm BiCMOS technology. Degradation asymmetry observed between NPN and PNP devices is accurately captured by this unified aging compact model. This study highlights the challenges of predicting degradation of complementary circuits and thereby improving its functionalities by designing better-matched NPN and PNP HBTs.

本文提出了一种精确，全面且基于物理的老化紧凑模型，用于在先进的互补NPN和PNP SiGe HBT中由于热载流子产生和氧化物陷阱而引起的应力诱发的退化。解析模型方程式是根据反应扩散理论和菲克扩散定律与氧化物捕获机制在加速应力条件下的求解得出的。通过在接近互补0.25 µm BiCMOS先进技术的安全操作区域附近进行的长期老化测试的结果，验证了模型的准确性。通过这种统一的老化紧凑模型，可以准确地捕获NPN和PNP设备之间观察到的退化不对称性。