Abstract Tetrapod A g 3 P O 4 was synthesized by a simple hydrothermal method, and ultraviolet lamp irradiation was used to precipitate A g on the surface of A g 3 P O 4 to form A g / A g 3 P O 4 metal-semiconductor structure. The field emission performance of A g / A g 3 P O 4 composite was studied. Compared with pure A g 3 P O 4 , precipitated A g changed the morphology of the surface of A g 3 P O 4 , effectively reducing the field emission turn-on field from 5.9 V μ m - 1 to 2.3 V μ m - 1 , and the field enhancement factor was increased from 1012 to 1923. After A g 3 P O 4 was wrapped by A g nanoparticles, the formed metal-semiconductor structure produced ohmic contact, accelerating the transfer of electrons on the interface and enhancing the field emission performance. A g nanoparticles protected A g 3 P O 4 from photodegradation, which effectively improved the stability of A g 3 P O 4 and the field emission enhancement mechanism was analyzed by the classical F-N theory.

中文翻译：

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具有增强场发射的Ag纳米颗粒装饰Ag3PO4

摘要 采用简单的水热法合成了四足类Ag 3 PO 4 ，利用紫外灯照射使Ag 3 PO 4 表面析出Ag，形成A g / A g 3 PO 4 金属-半导体结构。研究了A g / A g 3 PO 4 复合材料的场发射性能。与纯Ag 3 PO 4 相比，沉淀Ag改变了Ag 3 PO 4 表面的形貌，有效地将场发射开启场从5.9 V μ m - 1降低到2.3 V μ m - 1，并且场增强因子从1012提高到1923。Ag 3 PO 4 被Ag纳米颗粒包裹后，形成的金属-半导体结构产生欧姆接触，加速了电子在界面上的转移，增强了场发射性能。A g 纳米粒子保护 A g 3 PO 4 免受光降解，